data sheet 1 of 9 rev. 02, 2014-07-22 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTVA104501EH thermally-enhanced high power rf ldmos fet 450 w, 50 v, 960 ? 1215 mhz description the PTVA104501EH ldmos fet is designed for use in power ampli- ? er applications in the 960 to 1215 mhz frequency band. features include high gain and thermally-enhanced package with bolt-down ? ange. manufactured with in? neon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. PTVA104501EH package h-33288-2 features ? broadband internal input and output matching ? high gain and ef? ciency ? integrated esd protection ? low thermal resistance ? excellent ruggedness ? pb-free and rohs compliant ? capable of withstanding a 10:1 load mismatch (all phase angles) at 450 w peak under rf pulse, 128 s, 10% duty cycle. 15 25 35 45 55 65 15 25 35 45 55 65 28 30 32 34 36 38 40 42 44 efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 200 ma, t case = 25c, 128 s pulse width, 10% duty cycle 960 mhz 1030 mhz 1090 mhz 1150 mhz 1215 mhz output power efficiency a104501eh_g1 rf characteristics pulsed rf performance (tested in in? neon test ? xture) (tested in in? neon test ? xture) v dd = 50 v, i dq = 200 ma, p out = 450 w (peak), ? 1 = 960 mhz, ? 2 = 1090 mhz, ? 3 = 1215 mhz, rf pulse 128 s, 10% duty cycle characteristic symbol min typ max unit gain g ps 16.5 17.5 ? db drain efficiency ? d 53 58 ? % gain flatness ? g ? 0.85 1.8 db return loss irl ? ?9.5 ?6 db
PTVA104501EH data sheet 2 of 9 rev. 02, 2014-07-22 dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 105 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1 a v ds = 63 v, v gs = 0 v i dss ? ? 10 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.1 ? ? operating gate voltage v ds = 50 v, i dq = 200 ma v gs 3.0 3.5 4.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 105 v gate-source voltage v gs ?6 to +12 v junction temperature t j 200 c storage temperature range t stg ?65 to +150 c thermal resistance r ? jc 0.25 c/w (t case = 70c, 430 w cw, ? = 1090 mhz, v dd = 50 v, i dq = 200 ma) ordering information type and version order code package description shipping PTVA104501EH v1 PTVA104501EHv1xwsa1 h-33288-2, earless ? ange tray PTVA104501EH v1 r250 PTVA104501EH v1r250xtma1 h-33288-2, earless ? ange tape & reel, 250 pcs rf characteristics typical rf performance (not subject to production test, veri? ed by design/characterization in in? neon test ? xture) v dd = 50 v, i dq = 200 ma, input signal (t r = 7.0 ns, t f = 7.0 ns), 128 s pulse width, 10% duty cycle, class ab test mode of operation ? (mhz) irl (db) p 1db p 3db max p droop (pulse) @ p 1db t r (ns) @p 1db t f (ns) @p 1db gain (db) eff (%) p out (w) gain (db) eff (%) p out (w) 128 s, 10% 960 ?7.5 18.0 56 460 16.0 53 490 0.15 5 <2 1030 ?13.0 18.5 59 470 16.5 60 540 0.15 5 <2 1090 ?8.0 17.8 61 510 15.8 61 590 0.20 5 <2 1150 ?15.0 18.1 59 540 16.1 60 620 0.20 5 <2 1215 ?9.0 18.3 56 460 16.3 53 510 0.20 5 <2
data sheet 3 of 9 rev. 02, 2014-07-22 PTVA104501EH typical rf performance (data taken in production test fixture) 15 25 35 45 55 65 15 25 35 45 55 65 28 30 32 34 36 38 40 42 44 efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 200 ma, t case = 25c, 128 s pulse width, 10% duty cycle 960 mhz 1030 mhz 1090 mhz 1150 mhz 1215 mhz output power efficiency a104501eh_g1 12 14 16 18 20 22 28 30 32 34 36 38 40 42 44 gain (db) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 200 ma, t case = 25c, 128 s pulse width, 10% duty cycle 960 mhz 1030 mhz 1090 mhz 1150 mhz 1215 mhz gain a104501eh_g2 50 55 60 65 70 16 17 18 19 20 900 1000 1100 1200 1300 efficiency (%) gain (db) frequency (mhz) pulsed rf performance v dd = 50v, i dq = 200ma, p out = 450w (peak), 128 s pulse width, 10% duty cycle a104501eh_g3 gain efficiency 0.0 0.1 0.2 0.3 -25 -20 -15 -10 -5 900 1000 1100 1200 1300 power droop (db) irl (db) frequency (mhz) pulsed rf performance v dd = 50v, i dq = 200ma, p out = 450w (peak), 128 s pulse width, 10% duty cycle power droop irl a104501eh_g4
PTVA104501EH data sheet 4 of 9 rev. 02, 2014-07-22 typical rf performance (cont.) 15 25 35 45 55 65 15 25 35 45 55 65 28 30 32 34 36 38 40 42 44 efficiency (%) p out (dbm) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 200 ma, t case = 25c, p.w = 3.354ms, burts = 7 s on, 6 s off, l.t = 22.7% duty cycle 960 mhz 1030 mhz 1090 mhz 1150 mhz 1215 mhz a104501eh_g5 output power efficiency 12 14 16 18 20 22 28 30 32 34 36 38 40 42 44 gain (db) p in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 200 ma, t case = 25c p.w = 3.354ms, burts = 7 s on, 6 s off, l.t = 22.7% duty cycle 960 mhz 1030 mhz 1090 mhz 1150 mhz 1215 mhz gain a104501eh_g6 50 55 60 65 70 16 17 18 19 20 900 1000 1100 1200 1300 efficiency (%) gain (db) frequency (mhz) pulsed rf performance v dd = 50v, i dq = 200ma, p out = 450w (peak), p.w = 3.354ms, burts = 7 s on, 6 s off, l.t = 22.7% duty cycle a104501eh_g7 gain efficiency 0.0 0.1 0.2 0.3 -25 -20 -15 -10 -5 900 1000 1100 1200 1300 power droop (db) irl (db) frequency (mhz) pulsed rf performance v dd = 50v, i dq = 200ma, p out = 450w (peak), p.w = 3.354ms, burts = 7 s on, 6 s off, l.t = 22.7% duty cycle power droop irl a104501eh_g8
data sheet 5 of 9 rev. 02, 2014-07-22 PTVA104501EH broadband circuit impedance z source z load g s d load pull at max p out point ? 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 200 ma freq [mhz] z l [ ? ] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [ ? ] 960 1.35 ? j0.70 43.30 57.83 606.74 14.53 54.90 1.29 ? j1.37 1030 0.99 ? j0.78 42.14 57.62 578.10 15.48 50.96 1.02 ? j1.43 1090 1.24 ? j0.84 41.37 57.40 549.54 16.03 50.52 1.06 ? j1.51 1215 1.56 ? j0.99 39.24 56.92 492.04 17.68 48.12 1.13 ? j1.66 load pull at max g t point ? 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 200 ma freq [mhz] z l [ ? ] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [ ? ] 960 1.35 ? j0.70 40.10 55.70 371.54 15.60 58.76 2.15 ? j2.60 1030 0.99 ? j0.78 38.16 55.33 341.19 17.17 59.44 2.73 ? j2.02 1090 1.24 ? j0.84 36.05 54.14 259.42 18.09 56.31 3.55 ? j0.42 1215 1.56 ? j0.99 33.38 53.42 219.79 20.04 49.44 1.34 ? j0.08 load pull at max ef? ciency point ? 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 200 ma freq [mhz] z l [ ? ] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [ ? ] 960 1.35 ? j0.70 42.00 57.27 533.33 15.27 62.15 1.60 ? j1.79 1030 0.99 ? j0.78 39.44 56.34 430.53 16.90 61.78 2.27 ? j1.50 1090 1.24 ? j0.84 37.54 55.36 343.56 17.82 59.60 2.72 ? j1.29 1215 1.56 ? j0.99 36.19 55.58 361.41 19.39 56.63 1.65 ? j0.92 z optimum ? 16 s pulse width, 10% duty cycle, class ab, v dd = 50 v, 200 ma freq [mhz] z l [ ? ] p in [dbm] p out [dbm] p out [w] p g [db] pae eff [%] z out [ ? ] 960 1.35 ? j0.70 42.62 57.62 578.10 15.00 60.03 1.50 ? j1.61 1030 0.99 ? j0.78 39.82 56.62 459.20 16.80 61.39 2.03 ? j1.45 1090 1.24 ? j0.84 38.71 56.21 417.83 17.50 58.60 2.02 ? j1.38 1215 1.56 ? j0.99 37.79 56.47 443.61 18.68 53.43 1.29 ? j1.37 load pull performance freq [mhz] z source ? z load ? rjxrjx 960 2.04 ?0.30 0.79 ?0.02 1030 1.71 ?0.18 0.73 0.64 1090 1.45 0.09 0.95 1.09 1150 1.23 0.41 1.26 0.98 1215 1.07 0.77 0.71 0.93
PTVA104501EH data sheet 6 of 9 rev. 02, 2014-07-22 reference circuit reference circuit assembly diagram (not to scale) find gerber ? les for this test ? xture on the in? neon web site at www.in? neon.com/rfpower + PTVA104501EH_in_02 ro3010,025 (62) c102 rf_in rf_out v dd PTVA104501EH_cd_07-21-2014 r101 c103 c105 c104 c106 c108 c107 c109 c205 c204 c208 c207 c209 c201 c203 c210 c111 r103 s3 s2 s1 r106 r102 c101 r105 c110 r104 PTVA104501EH_out_02 ro3010,025 (62) c202 c206 r202 r201 c211 v dd
data sheet 7 of 9 rev. 02, 2014-07-22 PTVA104501EH components information component description suggested manufacturer p/n input c101, c103 capacitor, 39 pf atc 100b 390 c102 capacitor, 3.3 pf atc 800a 3r3 c104 capacitor, 56 pf atc 100b 560 c105 capacitor, 3.9 pf atc 800a 3r9 c106 capacitor, 2.4 pf atc 800a 2r4 c107, c110, c111 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k c108 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c109 capacitor, 1 f tdk corporation c4532x7r2a105m230ka r101 resistor, 20 ?? panasonic electronic components erj-8geyj200v r102 resistor, 1k ?? panasonic electronic components erj-8geyj102v r103 resistor, 2k ?? panasonic electronic components erj-8geyj202v r104 resistor, 1.2k ?? panasonic electronic components erj-3geyj122v r105 resistor, 1.3k ?? panasonic electronic components erj-3geyj132v r106 resistor, 10 ohms panasonic electronic components erj-8geyj100v s1 transistor in? neon technologies bcp56 s2 voltage regulator texas instruments lm78l05acm s3 potentiometer, 2k ?? bourns inc. 3224w-1-202e output c201 capacitor, 100 f cornell dubilier electronics (cde) sk101m100st c202 capacitor, 10 f cornell dubilier electronics (cde) sek100m100st c203, c210 capacitor, 39 pf atc 100b 390 c204, c207 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c205, c208 capacitor, 1 f tdk corporation c4532x7r2a105m230ka c206 capacitor, 22 f cornell dubilier electronics (cde) sek220m100st c209 capacitor, 56 pf atc 100b 560 c211 capacitor, 6800 f panasonic electronic components eco-s2ap682ea r201, r202 resistor, 5.6 ?? panasonic electronic components erj-8rqj5r6v reference circuit (cont.) reference circuit assembly dut PTVA104501EH test fixture part no. ltn/PTVA104501EH v1 pcb rogers 3010, 0.635 mm [0.025"] thick, 2 oz. copper, ? r = 10.2
PTVA104501EH data sheet 8 of 9 rev. 02, 2014-07-22 package outline specifications package h-33288-2 find the latest and most complete information about products and packaging at the in? neon internet page http://www.in? neon.com/rfpower diagram notesunless otherwise speci?ed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless speci?ed otherwise. 4. pins: d C drain; g C gate; s C source. 5. lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. gold plating thickness: 0.25 micron [10 microinch] max. 34.036 [1.340 ] 22.352.200 [.880.008] 1.575 [.062] sph 1.016 [.040] c l 3.962 +.254 ?.127 .156 +.010 ?.005 ] 27.940 [1.100] 2x 12.700 [.500] 19.431.510 [.765.020 ] 9.779 [.385] 2x 4.826.510 [.190.020] 45 x 2.032 [45 x .080] 4x r1.524 [r.060] 2x r1.626 [r.064] l c d s g c l 9.398 [.370] h-33288-2_po_01_03-01-2011 [
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